Novel Material For Non-volatile Phase Change Memory Devices

Chalcogenide alloys have found widespread adoption in rewritable DVD discs. State changes induced by different laser beam power levels result in changes in reflectivity. However the adoption of chalcogenides for phase change memory devices has been less successful. The key challenge is the high temperatures required to induce a state change. This high temperature is achieved by driving a high current through a heating element.

We have successfully deposited thin film, amorphous Zr-Cu alloy using a magnetron co-sputtering technique. Further tests have demonstrated that a factor of 2 change in resistance can be achieved. Overall these alloys have low resistance whether in either its amorphous or crystalline state which suggests that lower voltages are required relative to the chalcogenides. The metallic bonds in these amorphous materials, unlike those in the chalcogenides, will also lead to fast switching times.

· Faster switching times

· Lower power requirements

· Long cycle life

· Potential for n-ary devices